Electronic modulating device

ABSTRACT

An electronic modulating device is provided. The electronic modulating device includes a first modulating unit. The first modulating unit includes a first transistor including a channel arranged in an extending direction. The first modulating unit also includes a first modulating electrode electrically connected to the first transistor and arranged in a first longitudinal direction. The electronic modulating device also includes a second modulating unit. The second modulating unit includes a second transistor including a channel arranged in the extending direction. The second modulating unit also includes a second modulating electrode electrically connected to the second transistor and arranged in a second longitudinal direction that is different from the first longitudinal direction. The first included angle between the extending direction and the first longitudinal direction is different from a second included angle between the extending direction and the second longitudinal direction.

BACKGROUND Technical Field

The present disclosure relates to an electronic modulating device, andin particular to an electronic modulating device that includes differentarrangements of modulating electrodes.

Description of the Related Art

Electronic products that include a display panel, such as smartphones,tablets, notebooks, monitors, and TVs, have become indispensablenecessities in modern society. With the flourishing development of suchportable electronic products, consumers have high expectations regardingthe quality, functionality, and price of such products. These electronicproducts are often provided with communications capabilities. However,the communications capabilities still need to be improved.

SUMMARY

In accordance with some embodiments of the present disclosure, anelectronic modulating device is provided. The electronic modulatingdevice includes a first modulating unit. The first modulating unitincludes a first transistor including a channel arranged in an extendingdirection. The first modulating unit also includes a first modulatingelectrode electrically connected to the first transistor and arranged ina first longitudinal direction. The electronic modulating device alsoincludes a second modulating unit. The second modulating unit includes asecond transistor including a channel arranged in the extendingdirection. The second modulating unit also includes a second modulatingelectrode electrically connected to the second transistor and arrangedin a second longitudinal direction that is different from the firstlongitudinal direction. The first included angle between the extendingdirection and the first longitudinal direction is different from asecond included angle between the extending direction and the secondlongitudinal direction.

In accordance with some embodiments of the present disclosure, anelectronic modulating device is provided. The electronic modulatingdevice includes a first modulating unit. The first modulating unitincludes a first transistor including a channel. The first modulatingunit also includes a first modulating electrode electrically connectedto the first transistor. The electronic modulating device also includesa second modulating unit. The second modulating unit includes a secondtransistor including a channel. The second modulating unit also includesa second modulating electrode electrically connected to the secondtransistor. A distance between the channel of the first transistor andthe first modulating electrode is different from a distance between thechannel of the second transistor and the second modulating electrode

A detailed description is given in the following embodiments withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reading the subsequent detaileddescription and examples with references made to the accompanyingdrawings, wherein:

FIG. 1 illustrates a top view of the electronic modulating device inaccordance with some embodiments of the present disclosure.

FIGS. 2A and 2B illustrate enlarged top views of a modulating unit inthe electronic modulating device in accordance with some embodiments ofthe present disclosure.

FIGS. 3A and 3B illustrate examples of the definition of the extendingdirection of a channel in the electronic modulating device in accordancewith some embodiments of the present disclosure.

FIGS. 4A and 4B illustrate examples of the definition of the extendingdirection of the channel in the electronic modulating device inaccordance with some embodiments of the present disclosure.

FIGS. 5A and 5B illustrate examples of the definition of thelongitudinal direction of a modulating electrode in the electronicmodulating device in accordance with some embodiments of the presentdisclosure.

FIG. 6 illustrates enlarged top views of the modulating unit in theelectronic modulating device in accordance with some embodiments of thepresent disclosure.

FIGS. 7A and 7B illustrate examples of the modulating electrodes in theelectronic modulating device in accordance with some embodiments of thepresent disclosure.

FIG. 8 illustrates a cross-sectional view of the electronic modulatingdevice in accordance with some embodiments of the present disclosure.

FIG. 9 illustrates a cross-sectional view of the electronic modulatingdevice in accordance with some embodiments of the present disclosure.

FIG. 10 illustrates a top view of the electronic modulating device inaccordance with some embodiments of the present disclosure.

FIGS. 11A-11D illustrates a top view of the electronic modulating devicein accordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION

The electronic modulating device of the present disclosure and themanufacturing method thereof are described in detail in the followingdescription. In the following detailed description, for purposes ofexplanation, numerous specific details and embodiments are set forth inorder to provide a thorough understanding of the present disclosure. Itwill be apparent, however, that the exemplary embodiments set forthherein are used merely for the purpose of illustration, and theinventive concept may be embodied in various forms without being limitedto those exemplary embodiments. In addition, the drawings of differentembodiments may use like and/or corresponding numerals to denote likeand/or corresponding elements. However, the use of like and/orcorresponding numerals in the drawings of different embodiments does notsuggest any correlation between different embodiments. In addition, inthis specification, expressions such as “first material layer disposedabove/on/over a second material layer”, may indicate the direct contactof the first material layer and the second material layer, or it mayindicate a non-contact state with one or more intermediate layersbetween the first material layer and the second material layer. In theabove situation, the first material layer may not be in direct contactwith the second material layer.

In addition, in this specification, relative expressions are used. Forexample, “upper” or “lower” is used to describe the position of oneelement relative to another. It should be appreciated that if a deviceis flipped upside down, an element that is on the “bottom” will becomean element that is on the “top”.

It should be understood that, although the terms first, second, thirdetc. may be used herein to describe various elements, components,regions, layers, portions and/or sections, these elements, components,regions, layers, portions and/or sections should not be limited by theseterms. These terms are only used to distinguish one element, component,region, layer, portion or section from another element, component,region, layer or section. Thus, a first element, component, region,layer, portion or section discussed below could be termed a secondelement, component, region, layer, portion or section without departingfrom the teachings of the present disclosure.

It should be understood that this description of the exemplaryembodiments is intended to be read in connection with the accompanyingdrawings, which are to be considered part of the entire writtendescription. The drawings are not drawn to scale. In addition,structures and devices are shown schematically in order to simplify thedrawing.

The terms “about” and “substantially” typically mean +/−20% of thestated value, more typically +/−10% of the stated value, more typically+/−5% of the stated value, more typically +/−3% of the stated value,more typically +/−2% of the stated value, more typically +/−1% of thestated value and even more typically +/−0.5% of the stated value. Thestated value of the present disclosure is an approximate value. Whenthere is no specific description, the stated value includes the meaningof “about” or “substantially”. Moreover, when considering the deviationor the fluctuation of the manufacturing process, the term “same” mayalso include the meaning of “about” or “substantially”

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this disclosure belongs. It should be appreciated that,in each case, the term, which is defined in a commonly used dictionary,should be interpreted as having a meaning that conforms to the relativeskills of the present disclosure and the background or the context ofthe present disclosure, and should not be interpreted in an idealized oroverly formal manner unless so defined.

In addition, in some embodiments of the present disclosure, termsconcerning attachments, coupling and the like, such as “connected” and“interconnected,” refer to a relationship wherein structures are securedor attached to one another either directly or indirectly throughintervening structures, as well as both movable or rigid attachments orrelationships, unless expressly described otherwise.

In addition, the term “longitudinal direction” is defined as thedirection along or parallel to the long axis of an object. The long axisis defined as a line extending through the center of an objectlengthwise. For an elongated or oblong object, the long axis correspondsmost nearly to its greatest dimension lengthwise. For an object thatdoes not have a definite long axis, the long axis is the long axis ofthe smallest rectangle that can encompass the object.

In addition, the phrase “in a range from a first value to a secondvalue” indicates the range includes the first value, the second value,and other values in between.

In accordance with some embodiments of the present disclosure, anelectronic modulating device is provided. The electronic modulatingdevice has electronic units that have different included angles betweenthe extending direction of the channel of the transistor and thelongitudinal direction of the modulating electrode. Thus, there arefewer variations of the information received at different directionsfrom the electronic modulating device.

FIG. 1 illustrates a top view of an electronic modulating device 100 inaccordance with some embodiments of the present disclosure. It should beunderstood that some of the components of the electronic modulatingdevice 100 are omitted in FIG. 1 for clarity. It also should beunderstood that additional components may be added to the electronicmodulating device 100 in accordance with some embodiments of the presentdisclosure. Some of the components described below may be replaced oreliminated in accordance with some embodiments of the presentdisclosure.

As illustrated in FIG. 1, the electronic modulating device 100 includesa plurality of data lines 102 and scan lines 104. At least one of thedata lines 102 may extend along a first direction D1 (e.g. theY-direction), and at least one of the scan lines 104 may extend along asecond direction D2 (e.g. the X-direction) different from the firstdirection D1. The data lines 102 and the scan lines 104 may define aplurality of modulating units or pixels. In some embodiments, theelectronic modulating device 100 includes a plurality of modulatingunits 106A and modulating units 106B that are electrically connected tothe data lines 102 and the scan lines 104, respectively. For example,the source electrodes of some of the modulating units 106A and themodulating units 106B may be electrically connected to the data lines102. For another example, the gate electrodes of some of the modulatingunits 106A and the modulating units 106B may be electrically connectedto the scan lines 104. In addition, the modulating units 106A and/or themodulating units 106B may be both arranged along the first direction D1.Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, modulating units 106A and/or modulatingunits 106B may be both arranged along the second direction D2.

As shown in FIG. 1, at least one of the modulating units 106A includes atransistor 108A and a modulating electrode 110A, and at least one of themodulating units 106B includes a transistor 108B and a modulatingelectrode 110B. In some embodiments, the orientation of the modulatingmedium (such as liquid crystals) of the electronic modulating device 100can be controlled by adjusting the capacitance between the modulatingelectrode (110A and 110B) and a common electrode (shown in FIG. 8) sothat the electro-magnetic radiation (e.g. light) having a differentwavelength can be emitted from and/or received by the electronicmodulating device 100.

Refer to FIGS. 2A and 2B, which illustrate enlarged top views of themodulating unit 106A and the modulating unit 106B in accordance withsome embodiments of the present disclosure. As shown in FIG. 2A, thetransistor 108A includes a source electrode 112A, a drain electrode114A, a gate electrode 116A and a channel 118A. The source electrode112A and the drain electrode 114A may be disposed on two opposite sidesof the gate electrode 116A. The channel 118A may be formed between thesource electrode 112A and the drain electrode 114A. Moreover, the drainelectrode 114A may be electrically connected to the modulating electrode110A.

As shown in FIG. 2B, the transistor 108B includes a source electrode112B, a drain electrode 114B, a gate electrode 116B and a channel 118B.The source electrode 112B and the drain electrode 114B are disposed ontwo opposite sides of the gate electrode 116B. The channel 118B may beformed between the source electrode 112B and the drain electrode 114B.Moreover, the drain electrode 114B may be electrically connected to themodulating electrode 110B. The source electrode 112B, the gate electrode116B and the channel 118B of the modulating unit 106B may respectivelybe the same as or similar to the source electrode 112A, the gateelectrode 116A and the channel 118A of the modulating unit 106A.

In some embodiments, one of the differences between the modulating unit106A and the modulating unit 106B is that the included angles betweenthe extending direction of the channel and the longitudinal direction ofthe modulating electrode. In some embodiments, as shown in FIGS. 2A and2B, direction V1 and direction V2 can respectively be regarded as theextending directions of channel 118A and channel 118B. Moreover, thedirection V1 of channel 118A and the direction V2 of channel 118B may besubstantially parallel. The extending direction of the channel may be adirection determined by two reference points respectively on the drainelectrode and the source electrode. The two reference points may beoverlapped with the channel.

For example, as shown in FIG. 2A, the direction V1 of channel 118A maybe determined by reference point E on the source electrode 112A andreference point F on the drain electrode 114A. Similarly, the directionV2 of channel 118B may be determined by a reference point G on thesource electrode 112B and a reference point H on the drain electrode114B. More specifically, the positions of the reference points E and Fof the modulating unit 106A may correspond to the reference points G andH of the modulating unit 106B so that direction V1 may be substantiallyparallel to direction V2.

In some embodiments, the modulating electrode 110A may have arectangular shape. The longitudinal direction of the modulatingelectrode 110A may be substantially parallel to the long side of themodulating electrode 110A. Similarly, the longitudinal direction of themodulating electrode 110B may be substantially parallel to the long sideof the modulating electrode 110B. In this embodiment, direction V3,which may be substantially parallel to the long side of the modulatingelectrode 110A, may be the longitudinal direction of modulatingelectrode 110A. Direction V4, which may be substantially parallel to thelong side of the modulating electrode 110B, may be the longitudinaldirection of modulating electrode 110B. As shown in FIGS. 2A and 2B, thelongitudinal direction of modulating electrode 110B (direction V4) maybe different from the longitudinal direction of modulating electrode110A (direction V3).

In some embodiments, as shown in FIGS. 2A and 2B, the first includedangle θ_(A) between the direction V1 and the direction V3 is differentfrom a second included angle θ_(B) between the direction V2 and thedirection V4. That is, the included angle between the extendingdirection of the transistor 108A and the longitudinal direction of themodulating electrode 110A of the modulating unit 106A may be differentfrom the included angle between the extending direction of thetransistor 108B and the longitudinal direction of the modulatingelectrode 110B of the modulating unit 106B. Because the longitudinaldirection of the modulating electrode influences on the orientation ofthe modulating medium, the orientation of the modulating medium of themodulating unit 106A may be different from the orientation of themodulating medium of the modulating unit 106B. That is, the orientationof the modulating medium may vary in accordance with the included anglesof the modulating unit. Moreover, the direction V1 may be parallel tothe direction V2 so that the variance of the lithography and/or etchingprocess for forming the components of the modulating unit 106A and themodulating unit 106B may be reduced. Furthermore, the difference betweenthe width-to-length ratios of the channel 118A and the channel 118B mayalso be reduced.

In some embodiments, the difference between the first included angleθ_(A) and the second included angle θ_(B) may be greater than 15degrees. For example, the difference between the first included angleθ_(A) and the second included angle θ_(B) may be in a range from 15degrees to 90 degrees, such as 30 degrees or 60 degrees. In someembodiments, the difference between the first included angle θ_(A) andthe second included angle θ_(B) may be in a range from 45 degrees to 90degrees. In some cases, the difference between the first included angleθ_(A) and the second included angle θ_(B) may not be less than 15degrees. If the difference between the first included angle θ_(A) andthe second included angle θ_(B) is less than 15 degrees, the informationemitted by the electronic device may be affected when the receiver islocated in an undesired location. It is noted that the included anglesof the extending direction of the channel and the longitudinal directionof modulating electrode may include an acute angle and an obtuse angle.The first included angle θ_(A) and the second included angle θ_(B) maybe referred to the acute angle. But the present disclosure is notlimited thereto.

In some embodiments, as shown in FIGS. 2A and 2B, the length L1 of thedrain electrode 114A may be different from the length L2 of the drainelectrode 114B due to different extending directions of the modulatingelectrode 110A and the modulating electrode 110B. The lengths L1 and L2may be measured along the second direction D2 (e.g. the X-direction). Insome embodiments, the distance S1 between the channel 118A and themodulating electrode 110A may be different from the distance S2 betweenthe channel 118B and the modulating electrode 110B. The distances S1 andS2 may be measured along the second direction (e.g. the X-direction). Itshould be understood that the distances S1 and S2 can be defined as aminimum distance between the channel and the modulating electrode, andthe distances S1 and S2 are not limited to be measured along the seconddirection D2 but measured along the same direction.

FIGS. 2A and 2B illustrate that each of the source electrode, the drainelectrode, and the channel has a rectangular shape. Many variationsand/or modifications can be made to embodiments of the disclosure. Referto FIGS. 3A and 3B, which illustrate examples of the extending directionof the channel in accordance with some embodiments of the presentdisclosure. In some embodiments, as shown in FIG. 3A, the modulatingunit 106C includes a transistor 108C and a modulating electrode 110C.The transistor 108C may have a source electrode 112C, a drain electrode114C, a gate electrode 116C, a channel 118C and an semiconductor layer120C. The channel 118C may be disposed between the source electrode 112Cand the drain electrode 114C. The channels shown in the figures of thepresent disclosure are only for exemplary illustration and not intendedto limit the scope of the present disclosure. The people having ordinaryskill in the art should know the range of the channel region inpractice. The details will not be described herein. The source electrode112C and the drain electrode 114C respectively have multiple protrudingportions 122 and 124 so that the channel 118C may have a bent shape.

In this embodiment, the extending direction of the channel 118C may bedefined by two reference points located on the source electrode 112C andthe drain electrode 114C, respectively. These two reference points canbe chosen arbitrarily from the source electrode 112C and the drainelectrode 114C overlapping the channel 118C. For example, the directionV5, which may be determined by a reference point K on the sourceelectrode 112C and a reference point L on the drain electrode 114C, canbe defined as an extending direction of the channel 118C. In otherembodiments, the direction V6, which may be determined by a referencepoint K on the source electrode 112C and a reference point M on thedrain electrode 114C, can also be chosen to define an extendingdirection of the channel 118C. The positions of the reference pointsused to define the extending direction of one transistor are the same asor corresponding to those of another transistor. In some examples, theextending directions of the channels in the transistors of at least twoof the modulating units may be substantially parallel. Morespecifically, the included angles between the extending direction of thetransistor and the longitudinal direction of the modulating electrodemay vary in accordance with the longitudinal direction of the respectivemodulating electrodes.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the extending direction of thetransistor may be defined in other ways. As shown in FIG. 3B, there isthe smallest imaginary rectangle Z1 that can encircle the channel 118C.In this embodiment, the extending direction of the channel 118C may bereferred to the extending direction of the imaginary rectangle Z1, suchas the direction of the long side of the imaginary rectangle Z1.

In addition, as shown in FIG. 3B, the width-to-length ratio of thechannel 118C may be defined as the ratio of the width W of the channel118C to the length L3. The width W of the channel 118C may be the totallength of the channel 118C. The length L3 may be the length of the longside of the imaginary rectangle Z1.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the source electrode and the drainelectrode may have different shapes. Refer to FIGS. 4A and 4B, whichillustrate examples of the definition of the extending direction of thechannel in accordance with some embodiments of the present disclosure.As shown in FIGS. 4A and 4B, a modulating unit 106D includes atransistor 108D and a modulating electrode 110D. The transistor 108D mayinclude a source electrode 112D, a drain electrode 114D, a gateelectrode 116D, a channel 118D and a semiconductor layer 120D that isdisposed between the source electrode 112D and the gate electrode 116D.The shapes of the source electrode 112D and the drain electrode 114D aredifferent from the shapes of the source electrode 112C and the drainelectrode 114D of FIG. 3A. Moreover, the channel 118D has awidth-to-length ratio different from the channel 118C.

In this embodiment, the extending direction of the channel 118D may bedefined by two reference points located on the source electrode 112D andthe drain electrode 114D, respectively. The gate electrode 116D and thesemiconductor layer 120D forms an overlapping region. These tworeference points can be chosen arbitrarily from the source electrode112D and the drain electrode 114D in the overlapping region. Forexample, the direction V8, which may be determined by a reference pointP on the source electrode 112D and a reference point Q on the drainelectrode 114D, may be regarded as the extending direction of thechannel 118D.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the extending direction of thetransistor may be defined in other ways. As shown in FIG. 4B, there isthe smallest imaginary rectangle Z2 that can encircle the channel 118D.In this embodiment, the extending direction of the channel 118D may bereferred to the extending direction of the imaginary rectangle Z2, suchas the direction of the long side of the imaginary rectangle Z2. Thewidth-to-length ratio of the channel 118D may be defined as the ratio ofthe width W of the channel 118D to the length L4. The width W of thechannel 118D may be the total length of the channel 118D. The length L3may be the length of the long side of the imaginary rectangle Z2.

Refer to FIGS. 5A and 5B, which illustrate examples of the definition ofthe longitudinal direction of modulating electrodes in accordance withsome embodiments of the present disclosure. In some embodiments, asshown in FIG. 5A, the modulating electrode 110E has a rectangular shape.In this embodiment, the direction V10, which may be parallel to the longside of the modulating electrode 110E, may be defined as a longitudinaldirection of the modulating electrode 110E. In some embodiments, themodulating electrode 110F may have an irregular shape. FIG. 5Billustrates the smallest imaginary rectangle Z3 that can encircle themodulating electrode 110F. In this embodiment, direction V11, which maybe parallel to the long side of the imaginary rectangle Z3, can beregarded as the longitudinal direction of the modulating electrode 110F.The smallest imaginary rectangle mentioned above can be obtained bysoftware such as OpenCV or other suitable software.

Refer to FIG. 6, which illustrates an enlarged top view of themodulating unit in the electronic modulating device in accordance withsome embodiments of the present disclosure. As shown in FIG. 6, amodulating unit 106G includes transistor 108G and a modulating electrode110G. The transistor 108G includes a drain electrode 114G electricallyconnected to the modulating electrode 110G. The drain electrode 114G andthe modulating electrode 110G form an overlapping region Z5. In someembodiments, a ratio of the area of the overlapping region Z5 to thearea of the modulating electrode 110G may be in a range from 5% to 50%,such as 15% or 35%. In some embodiments, the ratio of the area of theoverlapping region Z5 to the area of the modulating electrode 110G maybe in a range from 5% to 20%. If the ratio of the area of theoverlapping region Z5 to the area of the modulating electrode 110G is ina range from 5% to 50%, the charging speed of the modulating electrodemay be improved.

As shown in FIG. 6, there is a third included angle θ₃ between thelongitudinal direction of the overlapping region Z5 and the longitudinaldirection of the modulating electrode 110G. As shown in FIG. 6, thedirection V12 can be regarded as the longitudinal direction of theoverlapping region Z5, and the direction V13 can be regarded as thelongitudinal direction of the modulating electrode 110G. In thisembodiment, the third included angle θ₃ between the longitudinaldirection of the overlapping region Z5 and the longitudinal direction ofthe modulating electrode 110G may be 90 degrees. Many variations and/ormodifications can be made to embodiments of the disclosure. In someembodiments, a third included angle θ₃ between the longitudinaldirection of the overlapping region Z5 and the longitudinal direction ofthe modulating electrode 110G may range from 70 degrees to 110 degrees,such as 80 degrees, 90 degrees, or 100 degrees.

Refer to FIGS. 7A and 7B, which illustrate examples of the modulatingelectrodes in the electronic modulating device in accordance with someembodiments of the present disclosure. As shown in FIGS. 7A and 7B, amodulating electrode 110H and a modulating electrode 110I of theelectronic modulating device may have different areas and shapes. Insome embodiments, the profile of the modulating electrode 110H andmodulating electrode 110I may have rounded corners. The rounded cornermay assist in decreasing the aggregation of electrons at a sharp point.As a result, electrostatic discharge (ESD) can be reduced.

As shown in FIGS. 7A and 7B, since the area of the modulating electrode110H may be different from the area of the modulating electrode 110I,the radius of curvature C1 of the corners of the modulating electrode110H may be different from the radius of curvature C2 of the corners ofthe modulating electrode 110H. In some embodiments where the area of themodulating electrode 110H may be greater than that of the modulatingelectrode 110I, the radius of curvature C1 may be greater than theradius of curvature C2.

Refer to FIG. 8, which illustrates a cross-sectional view of anelectronic modulating device 200 in accordance with some embodiments ofthe present disclosure. It should be understood that some of thecomponents of the electronic modulating device 200 are omitted in FIG. 8for clarity. It also should be understood that additional components maybe added to the electronic modulating device 200 in accordance with someembodiments of the present disclosure. Some of the components describedbelow may be replaced or eliminated in accordance with some embodimentsof the present disclosure.

As shown in FIG. 8, the electronic modulating device 200 includes afirst substrate 202. The first substrate 202 may be used as the supportfor the transistor, modulating electrode and other components. The firstsubstrate 202 may include a glass substrate, a ceramic substrate, aplastic substrate, and/or other applicable substrates. A gate insulatorlayer 204 and a passivation layer 206 are formed on the first substrate202. The gate insulator layer 204 may include, but is not limited to,silicon dioxide or high dielectric constant (high-k) material,phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), lowdielectric constant (low-k) dielectric material and other applicabledielectric materials. The low dielectric constant dielectric materialsinclude, but are not limited to, fluorinated silica glass (FSG), carbondoped silicon oxide, amorphous fluorinated carbon, parylene,bis-benzocyclobutenes (BCB), polyimides, combinations of theabove-mentioned materials, and other applicable materials. The gateinsulator layer 204 and the passivation layer 206 may be formed by adeposition process such as chemical vapor deposition, physical vapordeposition or other suitable deposition process.

In addition, the electronic modulating device 200 includes a transistor208 that is formed on the first substrate 202. As shown in FIG. 8, thetransistor 208 includes a source electrode 210, a drain electrode 212, agate electrode 214, and a semiconductor layer 216. The gate electrode214 may be disposed on the first substrate 202. The gate electrode 214may include metal materials. For example, the gate electrode 214 mayinclude, but is not limited to, copper (Cu), aluminum (Al), molybdenum(Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum(Pt), titanium (Ti). The gate electrode 214 may be formed by, but is notlimited to, a sputter process. The semiconductor layer 216 may bedisposed on the gate insulator layer 204. The material of thesemiconductor layer 216 may include, but is not limited to, amorphoussilicon, polysilicon such as low-temp polysilicon (LTPS), metal oxide orother suitable materials. The metal oxide may include indium galliumzinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tinoxide (IGZTO). The source electrode 210 and the drain electrode 212 maybe formed on the gate insulator layer 204. In addition, the sourceelectrode 210 and the drain electrode 212 may be disposed on the gateelectrode 214 and on two sides of the gate electrode 214. Moreover,portions of the source electrode 210 and the drain electrode 212 areformed on the semiconductor layer 216. The materials and formationmethods of the source electrode 210 and the drain electrode 212 may bethe same as or similar to those of the gate electrode 214. As shown inFIG. 8, the channel 218 may be formed in the gate insulator layer 204and between the source electrode 210 and the drain electrode 212. It isnoted that the structure of the transistor described herein is only forillustration, and it may use other suitable structures of thetransistors, such as a top-gate transistor.

The gate insulator layer 204 illustrated in FIG. 8 may be disposed onthe gate electrode 214. Many variations and/or modifications can be madeto embodiments of the disclosure. In some embodiments, the gateelectrode 214 may be formed on the passivation layer 206 and in the samehorizontal layer as a modulating electrode 222. In some embodiments, theelectronic modulating device 200 includes two gate electrodes wherethese two gate electrodes are located on the same horizontal layer. Forexample, these two gate electrodes may be formed on the first substrate202. In some embodiments, the electronic modulating device 200 includestwo gate electrodes where these two gate electrodes are disposed ondifferent horizontal layers. For example, one of the gate electrodes isdisposed on the first substrate 202, and one of the other is disposed onthe passivation layer 206.

As shown in FIG. 8, the electronic modulating device 200 includes aconductive element 220 and a modulating electrode 222. The modulatingelectrode 222 may be electrically connected to the drain electrode 212through the conductive element 220. The materials of the conductiveelement 220 and the modulating electrode 222 may be the same as orsimilar to the material of the gate electrode 214. In some embodiments,a lithography process and an etching process are performed on thepassivation layer 206 to form an opening. Next, a metal material isfilled into the opening and deposited on the passivation layer 206followed by performing a lithography process and an etching process topattern the metal material disposed on the passivation layer 206. As aresult, the conductive element 220 and the modulating electrode 222 areformed. The photolithography process includes, but is not limited to,photoresist coating (e.g., spin-on coating), soft baking, maskalignment, exposure, post-exposure baking, developing the photoresist,rinsing and drying (e.g., hard baking). The photolithography process mayalso be implemented or replaced by other proper processes, such as amaskless photolithography process, an electron-beam process, an ion-beamprocess, or a combination thereof. The etching process may include, butis not limited to, a dry etching process, a wet etching process, and/ora combination thereof

As shown in FIG. 8, the electronic modulating device 200 includes asecond substrate 224. The second substrate 224 may be configured todispose a common electrode and/or other components. The second substrate224 may include a glass substrate, a ceramic substrate, a plasticsubstrate and/or other applicable substrates. A display element layer226 may be formed on the second substrate 224. The display element layer226 may include, but is not limited to, a color filter layer, a lightshielding layer, a passivation layer, and other applicable components orlayers. In addition, a common electrode 228 may be formed on the secondsubstrate 224. The material and formation method of the common electrode228 may be the same as or similar to those of the gate electrode 214.FIG. 8 illustrates that the common electrode 228 may be non-patterned.Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the common electrode 228 may bepatterned so that the common electrode 228 has discrete portions.

As shown in FIG. 8, the electronic modulating device 200 may furtherinclude a spacer 230 and a modulating medium layer 232. The modulatingmedium layer 232 may be disposed between the modulating electrode 222and the common electrode 228. For example, the modulating medium layer232 may include a liquid crystal layer or other suitable layers. Thespacer 230 may be configured to determine the cell gap between the firstsubstrate 202 and the second substrate 224. In some embodiments, thespacer 230 may include, but is not limited to, polyethyleneterephthalate (PET), polyethylene (PE), polyethersulfone (PES),polycarbonate (PC), polymethylmethacrylate (PMMA), glass, any othersuitable materials, or a combination thereof. The potential differencebetween the modulating electrode 222 and the common electrode 228 maydetermine the orientation of the modulating medium layer 232. Thevoltage of the modulating electrode 222 can be controlled by thetransistor 208 so that the orientation of the modulating medium layer232 varied in accordance with the voltage of the modulating electrode222.

Moreover, the modulating medium layer 232 may be applied in differentliquid-crystal mode in accordance with the structure of the electrode ororientation of the polyimide layer. In some embodiments, the material ofthe modulating medium layer 232 may be, but is not limited to, a nematicliquid crystal, a smectic liquid crystal, a cholesteric liquid crystal,a blue phase liquid crystal, or any other applicable liquid-crystalmaterial.

As shown in FIG. 8, there is a length L5 of an overlapping portionbetween the drain electrode 212 and the modulating electrode 222, andthe modulating electrode 222 has a length L6. In some embodiments, aratio of the length L5 to the length L6 of the modulating electrode 222may be in a range from 30% to 90%, such as 50% or 70%. If the ratio ofthe length L5 to the length L6 of the modulating electrode 222 is in arange from 30% to 90%, the resistance of the electronic modulatingdevice 200 can be reduced. The length L5 and the length L6 may bemeasured along the longitudinal direction of the modulating electrode222. However, the length L5 and the length L6 may be measured alongother directions, and the scope of the disclosure is not intended to belimited.

Refer to FIG. 9, which illustrates a cross-sectional view of anelectronic modulating device 300 in accordance with some embodiments ofthe present disclosure. As shown in FIG. 9, the electronic modulatingdevice 300 includes a first electrode 234 disposed on the firstsubstrate 202 and a second electrode 236 disposed on the secondsubstrate 224. The modulating electrode 222′ may be disposed between thefirst electrode 234 and the second electrode 236, and electricallyconnected to the drain electrode 212 through the conductive element220′. The materials and the formation method of the conductive element220′, the modulating electrode 222′, the first electrode 234 and thesecond electrode 236 are the same as or similar to those of themodulating electrode 222, and are not repeated herein. The firstelectrode 234 may be separated from the second electrode 236 by thespacer 230 and a cavity 238. The cavity 238 may include, but is notlimited to, air or oil.

In some embodiments, the voltages of the first electrode 234 and thesecond electrode 236 may be fixed. The voltage of the modulatingelectrode 222′ may be controlled by the transistor 208. When the voltageof the modulating electrode 222′ changes, the modulating electrode 222′may shift correspondingly. When the position of the modulating electrode222′ changes, the capacitance between the second electrode 236 and themodulating electrode 222′, or the capacitance between the firstelectrode 234 and the modulating electrode 222′ may varycorrespondingly. Therefore, the electro-magnetic radiation (e.g. thelight) having a different wavelength can be emitted from and/or receivedby the electronic modulating device 300.

Refer to FIG. 10, which illustrates a top view of the electronicmodulating device 400 in accordance with some embodiments of the presentdisclosure. As shown in FIG. 10, the electronic modulating device 400includes a plurality of data lines 402 and scan lines 404. At least oneof the data lines 402 may extend along the first direction D1, and atleast one of the scan lines 404 may extend along the second direction D2different from the first direction D1. The electronic modulating device400 also includes a modulating unit 406A and a modulating unit 406B. Themodulating unit 406A includes a transistor 408A and a modulatingelectrode 410A. The modulating unit 406B includes a transistor 408B anda modulating electrode 410B. In some embodiments, the area of themodulating electrode 410A may be different from that of the modulatingelectrode 410B. Moreover, the radius of the curvature at the corner ofthe modulating electrode 410A may be different from the radius of themodulating electrode 410B. Furthermore, the longitudinal direction ofthe modulating electrode 410A may be different from longitudinaldirection of the modulating electrode 410B. As a result, the includedangle between the extending direction of the channel in the transistor408A and the longitudinal direction of the modulating electrode 410A maybe different from the included angle between the extending direction ofthe channel in the transistor 408B and the longitudinal direction of themodulating electrode 410B. The arrangement of the modulating unit 406Aand the modulating unit 406B shown in FIG. 10 may be modified. Forexample, the arrangement of the modulating unit 406A and the modulatingunit 406B may be the same as that shown in FIG. 1, and the scope of thedisclosure is not intended to be limited. In some embodiments, the sizeof the modulating electrode 410A of the modulating unit 406A may bedifferent from the size of the modulating electrode 410B and themodulating unit 406B. In some examples, different sizes of themodulating electrodes may correspond to different width-to-length ratiosof the channels. But the present disclosure is not limited thereto.

In some embodiments, at least one of the data lines 402 and at least oneof the scan lines 404 may have wave shapes. Therefore, the electronicmodulating device 400 may be applied in bending electronic device.Moreover, the included angles between different channels of thetransistors (such as the modulating unit 406A and the modulating unit406B) and the data line 402 (or scan line 404) may be substantially thesame.

Refer to FIGS. 11A-11D, which illustrate top views of the electronicmodulating devices in accordance with some embodiments of the presentdisclosure. FIGS. 11A-11D illustrate the different arrangements of thetransistors and the modulating electrodes. However, the scope of thedisclosure is not intended to be limited.

As shown in FIG. 11A, the electronic modulating device 500A includesmodulating units 506A, 506B, 506C and 506D. The transistors modulatingunits 506A, 506B, 506C and 506D respectively include one transistor508A, 508B, 508C and 508D and one modulating electrode 510A, 510B, 510Cand 510D. As shown in FIG. 11A, the extending directions of the channelsof the transistors 508A, 508B, 508C and 508D may be substantiallyparallel to each other. In addition, the longitudinal directions of themodulating electrodes 510A, 510B, 510C and 510D may be different fromeach other. As a result, the included angles between the extendingdirection of the channels of the transistors and the longitudinaldirections of the modulating electrodes of the modulating units 506A,506B, 506C and 506D may be different from each other. In someembodiments, some of the modulating units 506A, 506B, 506C and 506D maybe arranged along the first direction D1. Many variations and/ormodifications can be made to embodiments of the disclosure. In someembodiments, some of the modulating units 506A, 506B, 506C and 506D maybe arranged along the second direction D2.

As shown in FIG. 11B, the electronic modulating device 500B includes aplurality of modulating units 506A and modulating units 506C. In someembodiments, the modulating units 506A and the modulating units 506C arealternately arranged along the second direction D2. In addition, themodulating unit 506A and the modulating unit 506C are alternatelyarranged along the first direction D1.

As shown in FIG. 11C, the electronic modulating device 500C includes theplurality of modulating units 506A and the modulating units 506C. Insome embodiments, the four modulating units 506A can be classified to agroup G1 which is a 2×2 array, and the four modulating units 506C can beclassified to a group G2 which is a 2×2 array. The group G1 and thegroup G2 may be alternately arranged along the second direction D2. Inaddition, the group G1 and the group G2 may be alternately arrangedalong the first direction D1. Many variations and/or modifications canbe made to embodiments of the disclosure. In some embodiments, thegroups G1 and/or G2 may be an m×m array, wherein m is greater than 2. Insome embodiments, the groups G1 and/or G2 may be an m×n array, wherein mand n are greater than or equivalent to 2, m and n are positiveintegers, and m≠n. Furthermore, the group G1 and/or the group G2 may bean oblique square m×m array.

As shown in FIG. 11D, the electronic modulating device 500D includes theplurality of groups G3 and groups G4 that are 2×2 arrays. The group G3and the group G4 may be alternately arranged along the second directionD2 and the first direction D1. Moreover, the group G3 may consist ofthree modulating unit 506A and one modulating unit 506B. The group G4may consist of three modulating unit 506C and one modulating unit 506D.However, the scope of the disclosure is not intended to be limited.

Many variations and/or modifications can be made to embodiments of thedisclosure. For example, the electronic modulating device may include adifferent arrangement for the electronic units. In addition, the area ofthe modulating electrodes may be altered. Furthermore, thewidth-to-length ratio of the channel of the transistor may be fine-tunedin accordance with the area of the modulating electrodes.

To summarize the above, the present disclosure provides an electronicmodulating device. The electronic modulating device has electronic unitsthat have different included angles. The included angle may be betweenthe extending direction of the channel of the transistor and thelongitudinal direction of the modulating electrode. Thus, theinformation emitted by the electronic device may not be affected whenthe receiver is located in an undesired location. Furthermore, theelectronic modulating device of the embodiments can be applied in thestructure of microelectromechanical system (MEMS), antenna system, ordisplay device, and the scope of the disclosure is not intended to belimited.

Although some embodiments of the present disclosure and their advantageshave been described in detail, it should be understood that variouschanges, substitutions and alterations can be made herein withoutdeparting from the spirit and scope of the disclosure as defined by theappended claims.

What is claimed is:
 1. An electronic modulating device, comprising: afirst modulating unit comprising: a first transistor comprising achannel arranged in an extending direction; and a first modulatingelectrode electrically connected to the first transistor and arranged ina first longitudinal direction; and a second modulating unit comprising:a second transistor comprising a channel arranged in the extendingdirection; and a second modulating electrode electrically connected tothe second transistor and arranged in a second longitudinal directiondifferent from the first longitudinal direction; wherein a firstincluded angle between the extending direction and the firstlongitudinal direction is different from a second included angle betweenthe extending direction and the second longitudinal direction.
 2. Theelectronic modulating device as claimed in claim 1, wherein a differencebetween the first included angle and the second included angle is rangedfrom 15 degrees to 90 degrees.
 3. The electronic modulating device asclaimed in claim 1, wherein an area of the first modulating electrode isdifferent from an area of the second modulating electrode.
 4. Theelectronic modulating device as claimed in claim 3, wherein awidth-to-length ratio of the channel of the first transistor isdifferent from a width-to-length ratio of
 5. The electronic modulatingdevice as claimed in claim 1, wherein a distance between the channel ofthe first transistor and the first modulating electrode is differentfrom a distance between the channel of the second transistor and thesecond modulating electrode.
 6. The electronic modulating device asclaimed in claim 1, wherein the first transistor further comprises afirst drain electrode electrically connected to the first modulatingelectrode, and the first drain electrode and the first modulatingelectrode forms an overlapping region.
 7. The electronic modulatingdevice as claimed in claim 6, wherein the overlapping region has a thirdlongitudinal direction, and a third included angle between the thirdlongitudinal direction and the first longitudinal direction is in arange from 70 degrees to 110 degrees.
 8. The electronic modulatingdevice as claimed in claim 6, wherein a ratio of a length of theoverlapping region to a length of the first modulating electrode alongthe longitudinal direction of the overlapping region is from 30% to 90%.9. The electronic modulating device as claimed in claim 6, wherein aratio of an area of the overlapping region to the area of the firstmodulating electrode is from 5% to 50%.
 10. The electronic modulatingdevice as claimed in claim 6, wherein the second transistor furthercomprises a second drain electrode electrically connected to the secondmodulating electrode, and a length of the first drain electrode isdifferent from a length of the second drain electrode.
 11. Theelectronic modulating device as claimed in claim 1, wherein the firstmodulating electrode has a first rounded corner, and the secondmodulating electrode has a second rounded corner.
 12. The electronicmodulating device as claimed in claim 11, wherein a radius of curvatureof the first rounded corner is different from a radius of the secondrounded corner.
 13. The electronic modulating device as claimed in claim1, further comprising: a scan line extending along a first direction,and electrically connected to at least one of the first transistor andthe second transistor; and a data line extending along a seconddirection different from the first direction; wherein at least one ofthe scan line the data line has a wavy shape.
 14. The electronicmodulating device as claimed in claim 1, further comprising a firstcommon electrode and a modulating medium layer, a portion of themodulating medium layer is disposed between the first common electrodeand the first modulating electrode.
 15. The electronic modulating deviceas claimed in claim 1, wherein the first modulating unit furthercomprises a first electrode and a second electrode, and wherein thefirst electrode is disposed between the first modulating electrode andthe first transistor, and the first modulating electrode is disposedbetween the first electrode and the second electrode.
 16. An electronicmodulating device, comprising: a first modulating unit comprising: afirst transistor comprising a channel; and a first modulating electrodeelectrically connected to the first transistor; and a second modulatingunit comprising: a second transistor comprising a channel; and a secondmodulating electrode electrically connected to the second transistor;wherein a distance between the channel of the first transistor and thefirst modulating electrode is different from a distance between thechannel of the second transistor and the second modulating electrode.17. The electronic modulating device as claimed in claim 16, wherein anarea of the first modulating electrode is different from an area of thesecond modulating electrode.
 18. The electronic modulating device asclaimed in claim 16, wherein a width-to-length ratio of the channel ofthe first transistor is different from width-to-length of the channel ofthe second transistor.
 19. The electronic modulating device as claimedin claim 16, wherein the first transistor further comprises a firstdrain electrode electrically connected to the first modulatingelectrode, the second transistor further comprises a second drainelectrode electrically connected to the second modulating electrode, anda length of the first drain electrode is different from a length of thesecond drain electrode.
 20. The electronic modulating device as claimedin claim 16, wherein the first drain electrode and the first modulatingelectrode forms an overlapping region, and a ratio of the area of theoverlapping region to the area of the first modulating electrode is in arange from 5% to 50%.